DocumentCode
786835
Title
New and fast MOSFET parameter extraction method
Author
Scharff, C. ; Carter, J.C. ; Evans, A.G.R.
Author_Institution
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Volume
28
Issue
21
fYear
1992
Firstpage
2006
Lastpage
2008
Abstract
A new technique for the extraction of submicrometre MOSFET parameters (effective threshold voltage, low field mobility, effective channel length, parasitic series resistance and mobility degradation parameter) is described. The method has been tested on transistors down to 0.3 mu m effective gate length. The technique is compared with others and is found to be fast, accurate and simpler to implement and can be carried out with standard measurement equipment.
Keywords
insulated gate field effect transistors; semiconductor device models; 0.3 micron; effective channel length; gate length; low field mobility; mobility degradation parameter; parameter extraction method; parasitic series resistance; standard measurement equipment; submicrometre MOSFET; submicron MOSFET, short channel effects; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921286
Filename
170890
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