Title :
New and fast MOSFET parameter extraction method
Author :
Scharff, C. ; Carter, J.C. ; Evans, A.G.R.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
A new technique for the extraction of submicrometre MOSFET parameters (effective threshold voltage, low field mobility, effective channel length, parasitic series resistance and mobility degradation parameter) is described. The method has been tested on transistors down to 0.3 mu m effective gate length. The technique is compared with others and is found to be fast, accurate and simpler to implement and can be carried out with standard measurement equipment.
Keywords :
insulated gate field effect transistors; semiconductor device models; 0.3 micron; effective channel length; gate length; low field mobility; mobility degradation parameter; parameter extraction method; parasitic series resistance; standard measurement equipment; submicrometre MOSFET; submicron MOSFET, short channel effects; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921286
