Radiation Induced Surface Recombination in Oxide Passivated Transistors

Until very recently, the accumulation of positive charge has been reported as the dominant mechanism responsible for the "surface effect" in oxide passivated devices. A bipolar planar device with MOS field electrodes over each junction was investigated in the hope it would prove resistant to the " surface effect". Some of the results of this investigation are presented in terms of models of the influence of the MOS field electrodes. The existence of the positive charge effect and the introduction of acceptor-like surface recombination states are demonstrated. The additional surface recombination states are shown to be the dominant mechanism.