DocumentCode :
786858
Title :
Surface Effects in Silicon Solar Cells
Author :
Brown, R.R.
Author_Institution :
The Boeing Company Seattle, Washington
Volume :
14
Issue :
6
fYear :
1967
Firstpage :
260
Lastpage :
265
Abstract :
Very low-energy protons (0.4 to 27.5 kev) were used to study surface effects in silicon solar cells. The types of solar cells tested included conventional cells of n/p and p/n construction, as well as recently developed lithium-doped p/n cells (supplied by Heliotek Inc.). A proton beam of selected energy was used as a probe to penetrate to specified depths within the cells. Characteristic V-I curves were obtained before, during, and after proton exposure. Proton-induced degradation of the cell characteristics were analyzed. Anomalous damage, including partially recoverable losses of open-circuit voltage and significant losses of maximum power, were identified with various regions of the cells by correlation with proton penetration depths.
Keywords :
Degradation; Difference equations; Photovoltaic cells; Protons; Radiative recombination; Silicon; Solar power generation; Surface fitting; Testing; Xenon;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1967.4324805
Filename :
4324805
Link To Document :
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