DocumentCode :
786868
Title :
Implementation of a comprehensive and robust MOSFET model in cadence SPICE for ESD applications
Author :
Gao, X.F. ; Liou, J.J. ; Bernier, J. ; Croft, G. ; Ortiz-Conde, A.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Volume :
21
Issue :
12
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
1497
Lastpage :
1502
Abstract :
Electrostatic discharge (ESD) is a critical reliability concern for microchips. This paper presents a comprehensive computer-aided design tool for ESD applications. Specifically, the authors develop an improved and robust MOS model and implement such a model into the industry standard Cadence SPICE for ESD circuit simulation. The key components relevant to ESD in the MOS model are studied and the implementation procedure is discussed. Experimental data measured from the human body model tester are included in support of the model.
Keywords :
MOSFET; SPICE; circuit simulation; electrostatic discharge; semiconductor device models; semiconductor device reliability; Cadence SPICE; ESD circuit simulation; computer-aided design tool; electrostatic discharge; human body model tester; reliability concern; robust MOSFET model; Anthropometry; Application software; Biological system modeling; Circuit simulation; Design automation; Electrostatic discharge; MOSFET circuits; Robustness; SPICE; Standards development;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2002.804379
Filename :
1097869
Link To Document :
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