Title :
Activation energy of thin SiO2 films
Author :
Ditali, A. ; Black, William
Author_Institution :
Micron Semiconductor Inc., Boise, ID, USA
Abstract :
The activation energy of thin SiO2 films was evaluated at varying temperatures, applied electric fields, oxide thicknesses and electrode areas. It was shown that the thermal activation energy is not constant and is dependent on various parameters that have an impact on the breakdown rate of reaction.
Keywords :
MOS integrated circuits; dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; metal-insulator-semiconductor structures; oxidation; reliability; silicon compounds; activation energy; breakdown rate of reaction; electric fields; electrode areas; oxide thicknesses; temperatures; thin SiO 2 films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921291
