Title :
A New Radiation-Hard MOS Transistor
Author :
Long, D.M. ; Baer, R.
Author_Institution :
Martin Marietta Corporation, Baltimore, Maryland 21203
Keywords :
FETs; Fabrication; Gamma rays; Heat treatment; Inductors; Laboratories; MOSFETs; Neutrons; Testing; Thermal stability;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1967.4324811
