Title :
Trapwave Inc. [Microwave Bytes]
Author :
Cripps, Steve C.
Abstract :
The article discusses the mechanism behind the Trapatt oscillator. This device is a p-n junction diode made from silicon which uses avalanche breakdown to generate oscillation and power at microwave frequencies. The Trapatt´s forte was the generation of very short pulses of high microwave power at high efficiency.
Keywords :
TRAPATT diodes; avalanche breakdown; microwave diodes; microwave oscillators; p-n junctions; Si; Trapatt oscillator; avalanche breakdown; microwave frequencies; p-n junction diode; short pulse generation; silicon; Avalanche breakdown; Diodes; High power microwave generation; Microwave devices; Microwave frequencies; Microwave generation; Microwave oscillators; P-n junctions; Power generation; Silicon;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2008.924789
