Quantum-tailored solid-state devices

Author

Drummond, Timothy J. ; Gourley, Paul L. ; Zipperian, Thomas E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

25

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

33

Lastpage

37

Abstract

Techniques that allow semiconductor crystals to be grown on one layer at a time are described, and the potential they offer for tailoring device characteristics precisely by controlling the band gap is discussed. Three tools used to accomplish this are examined: alloying, which changes a semiconductor´s chemical composition; the juxtaposition of heterogeneous materials to form heterojunctions; and the introduction of mechanical strain between crystal layers. Band-gap engineering of optical devices is given particular attention.<>

Keywords

high electron mobility transistors; semiconductor junction lasers; semiconductor superlattices; alloying; band gap; crystal layers; heterogeneous materials; heterojunctions; mechanical strain; optical devices; quantum-tailored solid-state devices; semiconductor crystals; Alloying; Chemicals; Composite materials; Crystalline materials; Crystals; Heterojunctions; Optical materials; Photonic band gap; Semiconductor materials; Solid state circuits;

fLanguage

English

Journal_Title

Spectrum, IEEE

Publisher

ieee

ISSN

0018-9235

Type

jour

DOI

10.1109/6.4562

Filename

4562