DocumentCode
787308
Title
Modeling of Yb3+-sensitized Er3+-doped silica waveguide amplifiers
Author
Lester, Christian ; Bjarklev, Anders ; Rasmussen, Thomas ; Dinesen, Palle Geltzer
Author_Institution
Center for Broadband Telecommun., Tech. Univ. Denmark, Lyngby, Denmark
Volume
13
Issue
5
fYear
1995
fDate
5/1/1995 12:00:00 AM
Firstpage
740
Lastpage
743
Abstract
A model for Yb3+-sensitized Er3+-doped silica waveguide amplifiers is described and numerically investigated in the small-signal regime. The amplified spontaneous emission in the ytterbium-band and the quenching process between excited erbium ions are included in the model. For pump wavelengths between 860 and 995 nm, the amplified spontaneous emission in the ytterbium-band is found to reduce both the gain and the optimum length of the amplifier significantly. The achievable gain of the Yb3+-sensitized amplifier is found to be higher than in an Er3+-doped silica waveguide without Yb 3+ (18 dB versus 9 dB for a pump power of 100 mW). However, it is important to optimize the Yb-concentration according to the choice of pump wavelength
Keywords
erbium; excited states; optical planar waveguides; optical pumping; optical saturable absorption; solid lasers; superradiance; waveguide lasers; ytterbium; 100 mW; 860 to 995 nm; Yb-concentration; Yb3+-sensitized Er3+-doped silica waveguide amplifiers; amplified spontaneous emission; excited erbium ions; integrated optics; optimum length; pump power; pump wavelength; pump wavelengths; quenching process; small-signal regime; Erbium; Optical amplifiers; Optical fibers; Optical waveguides; Semiconductor optical amplifiers; Silicon compounds; Slabs; Spontaneous emission; Stationary state; Ytterbium;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.387791
Filename
387791
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