DocumentCode :
787342
Title :
Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells
Author :
Larcher, Luca ; Verzellesi, Giovanni ; Pavan, Paolo ; Lusky, E. ; Bloom, Ilan ; Eitan, Boaz
Author_Institution :
Dipt., di Sci. e Metodi dell´´Ingegneria, Modena Univ., Italy
Volume :
49
Issue :
11
fYear :
2002
fDate :
11/1/2002 12:00:00 AM
Firstpage :
1939
Lastpage :
1946
Abstract :
The aim of this paper is to achieve a correct description of the programming charge distribution in NROM memory devices. This is essential to prove device functionality and to extrapolate scaling limits of devices. For this purpose we employ an inverse modeling based methodology using measurements easily performed, such as subthreshold characteristics and threshold voltage measurements. We show a simple model of programming charge distribution that can be easily implemented in two-dimensional (2-D) TCAD simulations. Results show good agreement between measured and simulated currents under different bias conditions and for different programming levels.
Keywords :
CMOS memory circuits; PLD programming; electric charge; flash memories; semiconductor device models; 2D TCAD simulations; NROM memory; bias conditions; device functionality; device reliability; device scaling limits extrapolation; drift-diffusion simulations; flash memory cell; inverse modeling based methodology; model; nitride charge density; programming charge distribution; programming levels; semiconductor memories; subthreshold characteristics; threshold voltage measurements; Current measurement; Dielectric measurements; Electron traps; Flash memory; Inverse problems; Performance evaluation; Silicon; Threshold voltage; Two dimensional displays; Voltage measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.804726
Filename :
1097910
Link To Document :
بازگشت