DC SPICE model for nanocrystalline and microcrystalline silicon TFTs

Author

Dosev, D. ; Ytterdal, T. ; Pallares, J. ; Marsal, L.F. ; Iñíguez, B.

Author_Institution

Departament d´´Enginyeria Electronica Electrica i Automatica, Univ. Rovira i Virgili, Tarragona, Spain

Volume

49

Issue

11

fYear

2002

fDate

11/1/2002 12:00:00 AM

Firstpage

1979

Lastpage

1984

Abstract

In this paper, we present a physically-based analytical model for n-channel nanocrystalline and microcrystalline thin-film transistors suitable for implementation in circuit simulators such as SPICE. The model is based on existing models for amorphous silicon thin film transistors, which have been extended to account for observed physical phenomena in nanocrystalline and microcrystalline thin film transistors. The proposed model has been verified for the most important regions of operation of the devices and has shown good agreement with experimental data.

Keywords

SPICE; carrier mobility; elemental semiconductors; nanostructured materials; semiconductor device models; silicon; thin film transistors; DC SPICE model; Si; Si n-channel TFTs; Si thin film transistors; circuit simulators; drain current equations; microcrystalline TFT; nanocrystalline TFT; physically-based analytical model; Analytical models; Circuit simulation; Crystalline materials; Lighting; SPICE; Silicon; Stress; Temperature; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.804719

Filename

1097915