A no-snapback LDMOSFET with automotive ESD endurance

Author

Kawamoto, Kazunori ; Takahashi, Shigeki ; Fujino, Seiji ; Shirakawa, Isao

Author_Institution

Device R&D, Denso Corp., Aichi, Japan

Volume

49

Issue

11

fYear

2002

fDate

11/1/2002 12:00:00 AM

Firstpage

2047

Lastpage

2053

Abstract

This paper presents a no-snapback lateral double-diffused MOSFET (LDMOSFET), which endures the electrostatic discharge (ESD) requirement for automotive applications under the condition of 15 kV, 150 pF, and 150 Ω, representing one order of magnitude higher ESD voltage than conventional LDMOS. First, the mixed (circuit and device) mode simulations analyze the typical ESD failure dynamics of the conventional LDMOSFET, correlating the circuit level transient responses and the device level snapback characteristics (i.e., the negative breakdown voltage-current (V-I) characteristics). Then, the mechanism of the snapback is clarified from the aspect of the feedback link between the turn-on of the parasitic bipolar junction transistor (BJT) and the breakdown of the drain n-n⁺ diode. Finally, a no-snapback LDMOSFET is experimentally demonstrated that attains the objective ESD endurance.

Keywords

MOSFET; electrostatic discharge; failure analysis; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; transient response; 15 kV; 150 ohm; 150 pF; ESD failure dynamics; Si; automotive ESD endurance; circuit level transient responses; device level snapback characteristics; drain n-n⁺ diode; electrostatic discharge; feedback link; lateral double-diffused MOSFET; mode simulations; negative breakdown voltage-current characteristics; no-snapback LDMOSFET; objective ESD endurance; parasitic bipolar junction transistor; turn-on; Analytical models; Automotive applications; Automotive engineering; Breakdown voltage; Circuit simulation; Electrostatic discharge; Failure analysis; MOSFET circuits; Transient analysis; Vehicle dynamics;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.804734

Filename

1097924