Title :
Maximum allowable bulk defect density for generation-recombination noise-free device operation
Author :
Hou, Fan-Chi ; Bosman, Gijs ; Law, Mark E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
11/1/2002 12:00:00 AM
Abstract :
Generation-recombination noise associated with bulk defect levels in silicon is modeled in a partial differential equation-based device simulator to study the maximum allowable defect density that guarantees generation-recombination (g-r) noise-free operation in the presence of hot-carrier effects and space-charge injection.
Keywords :
defect states; electron-hole recombination; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device noise; silicon; space charge; Si; bulk defect density; carrier trapping; generation-recombination noise; hot carrier effects; partial differential equation; semiconductor device; silicon; simulation model; space charge injection; Background noise; Electron traps; Equations; Fluctuations; Noise generators; Noise level; Noise reduction; Photonic band gap; Semiconductor device noise; Semiconductor devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.804705
