Title :
A buffer-based baseband analog front end for CMOS bluetooth receivers
Author :
Elwan, Hassan O. ; Younus, Mohammed Iqbal ; Al-Zaher, Hussein A. ; Ismail, Mohammed
Author_Institution :
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
fDate :
8/1/2002 12:00:00 AM
Abstract :
A CMOS low-power baseband analog front end (BAFE) for an integrated bluetooth receiver is presented. The BAFE is designed using a new fully differential buffer (FDB) circuit that can effectively implement filters with gain/filtering interleaved operations. The BAFE utilizes five FDB circuits to implement a sixth-order low noise high linear prefilter, a sixth-order MOS-C tunable filter and a variable gain amplifier (VGA). The distribution of gain and filtering between the various blocks simplifies the design of the VGA stages and allows a good compromise between the input referred noise and the overall linearity. The analog front end is fabricated using a regular 1.2-μm CMOS process and occupies an area of 1.7 mm × 1.7 mm. Measurements results indicate that the total standby current consumption is less than 2.4 mA while providing a gain control range from 12-30 dB in 6-dB step. The input referred noise is less than 42 nV/√(Hz) and the out-of-band IIP3 of more than 12 dBm.
Keywords :
Bluetooth; CMOS analogue integrated circuits; buffer circuits; low-power electronics; radio receivers; 1.2 micron; 2.4 mA; CMOS low-power baseband analog front end; MOS-C tunable filter; fully differential buffer; gain control; gain/filtering interleaved operations; input referred noise; integrated Bluetooth receiver; linear prefilter; linearity; out-of-band IIP3; standby current consumption; variable gain amplifier; Baseband; Bluetooth; CMOS process; Circuit noise; Filtering; Gain; Linearity; Low-noise amplifiers; Nonlinear filters; Tunable circuits and devices;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
DOI :
10.1109/TCSII.2002.805629