Title :
Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation
Author :
Moon, J.S. ; Micovic, M. ; Kurdoghlian, A. ; Janke, P. ; Hashimoto, P. ; Wong, W.-S. ; McCray, L. ; Nguyen, C.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
We report low microwave noise performance of discrete AlGaN-GaN HEMTs at DC power dissipation comparable to that of GaAs-based low-noise FETs. At 1-V source-drain (SD) bias and DC power dissipation of 97 mW/mm, minimum noise figures (NFmin) of 0.75 dB at 10 GHz and 1.5 dB at 20 GHz were achieved, respectively. A device breakdown voltage of 40 V was observed. Both the low microwave noise performance at small DC power level and high breakdown voltage was obtained with a shorter SD spacing of 1.5 μm in 0.15-μm gate length GaN HEMTs. By comparison, NFmin with 2 μm SD spacing was 0.2 dB greater at 10 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device breakdown; semiconductor device noise; wide band gap semiconductors; 0.15 micron; 0.75 to 1.5 dB; 1.5 micron; 10 to 20 GHz; 2 micron; 40 V; AlGaN-GaN; DC power dissipation; device breakdown voltage; discrete AlGaN-GaN HEMTs; high breakdown voltage; low noise performance; microwave noise performance; Aluminum gallium nitride; FETs; Gallium nitride; HEMTs; MODFETs; Microwave devices; Noise figure; Noise level; Noise measurement; Power dissipation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.803766
