Title :
Novel self-convergent programming method using source-induced band-to-band hot electron injection
Author :
Liyang Pan ; Jun Zhu ; Zhihong Liu ; Ying Zeng ; Jianzhao Liu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The authors describe a novel self-converging programming method using the source-induced band-to-band hot electron (SIBE) injection. This method features low current, high speed, and good reliability, and automatically converges at the desired threshold voltage state without any conventional verification operations. The programming leakage current of this method is only about 3 μA/μm, and the programming time is as low as 30 μs. A threshold voltage model is also proposed and shows good consistency with measured results.
Keywords :
PLD programming; flash memories; hot carriers; integrated circuit reliability; integrated memory circuits; leakage currents; 30 mus; SIBE injection; drain leakage current; flash memory; high speed technique; programming leakage current; programming time; reliability; self-convergent programming method; source-induced band-to-band hot electron injection; threshold voltage model; threshold voltage state; write operation; Flash memory; Flash memory cells; Hot carriers; Implants; Leakage current; Nonvolatile memory; Secondary generated hot electron injection; Threshold voltage; Tunneling; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.802603
