Title :
Surface Treatment of Germanium Lithium Diodes
Author :
McKenzie, J.M. ; de Wit, R.C.
Author_Institution :
Bell Telephone Laboratories, Incorporated Whippany, N. J.
Abstract :
Several surface treatments are described which change the I-V characteristics of lithium drifted germanium diodes. These treatments, applied after the final etch, have reduced the diode leakage current to < 10-9 A for fields of up to 600 V/mm. Treatments achieving this on several diodes are described.
Keywords :
Crystalline materials; Crystals; Diodes; Electrons; Etching; Germanium; Leakage current; Lithium; Surface cleaning; Surface treatment;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1968.4324885
