DocumentCode
787667
Title
Surface Treatment of Germanium Lithium Diodes
Author
McKenzie, J.M. ; de Wit, R.C.
Author_Institution
Bell Telephone Laboratories, Incorporated Whippany, N. J.
Volume
15
Issue
1
fYear
1968
Firstpage
444
Lastpage
447
Abstract
Several surface treatments are described which change the I-V characteristics of lithium drifted germanium diodes. These treatments, applied after the final etch, have reduced the diode leakage current to < 10-9 A for fields of up to 600 V/mm. Treatments achieving this on several diodes are described.
Keywords
Crystalline materials; Crystals; Diodes; Electrons; Etching; Germanium; Leakage current; Lithium; Surface cleaning; Surface treatment;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1968.4324885
Filename
4324885
Link To Document