Ballistic MOSFET reproduces current-voltage characteristics of an experimental device

Author

Natori, Kenji

Author_Institution

Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan

Volume

23

Issue

11

fYear

2002

Firstpage

655

Lastpage

657

Abstract

The ballistic MOSFET characteristics are compared in detail with those of the experimental 70-nm device at low temperatures reported by Sai-Halasz et al. (1987). The saturated region characteristics for V/sub G//spl les/0.8 V show good agreement and a proper consideration of higher subbands significantly improves agreement for V/sub G//spl ges/1.0 V. The discrepancy is large in the linear region due to carrier scattering. The carrier backscattering mechanism and the bias effect are discussed.

Keywords

MOSFET; cryogenic electronics; semiconductor device models; 0.8 V; 1 V; 70 nm; 77 K; I-V characteristics; ballistic MOSFET characteristics; bias effect; carrier backscattering mechanism; carrier scattering; cryogenic electronics; current density; current-voltage characteristics; linear region; low temperature operation; saturated region characteristics; semiconductor device modeling; Backscatter; Boron; Current density; Current-voltage characteristics; Electrodes; Electrons; MOSFET circuits; Scattering; Semiconductor device modeling; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.803765

Filename

1097943