Title :
Ballistic MOSFET reproduces current-voltage characteristics of an experimental device
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan
Abstract :
The ballistic MOSFET characteristics are compared in detail with those of the experimental 70-nm device at low temperatures reported by Sai-Halasz et al. (1987). The saturated region characteristics for V/sub G//spl les/0.8 V show good agreement and a proper consideration of higher subbands significantly improves agreement for V/sub G//spl ges/1.0 V. The discrepancy is large in the linear region due to carrier scattering. The carrier backscattering mechanism and the bias effect are discussed.
Keywords :
MOSFET; cryogenic electronics; semiconductor device models; 0.8 V; 1 V; 70 nm; 77 K; I-V characteristics; ballistic MOSFET characteristics; bias effect; carrier backscattering mechanism; carrier scattering; cryogenic electronics; current density; current-voltage characteristics; linear region; low temperature operation; saturated region characteristics; semiconductor device modeling; Backscatter; Boron; Current density; Current-voltage characteristics; Electrodes; Electrons; MOSFET circuits; Scattering; Semiconductor device modeling; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.803765
