• DocumentCode
    787706
  • Title

    Multilevel vertical-channel SONOS nonvolatile memory on SOI

  • Author

    Lee, Yong Kyu ; Sim, Jae Sung ; Sung, Suk Kang ; Lee, Chang Ju ; Kim, Tae Hun ; Lee, Jong Duk ; Park, Byung Gook ; Lee, Dong Hun ; Kim, Young Wug

  • Author_Institution
    Seoul National University
  • Volume
    23
  • Issue
    11
  • fYear
    2002
  • Firstpage
    664
  • Lastpage
    666
  • Abstract
    A first multilevel vertical-channel silicon-oxide-nitride-oxide-silicon (MLVC-SONOS) memory cell is proposed and fabricated using 0.12-μm silicon-on-insulator (SOI) standard logic process for Flash memory cell with ultrahigh density. If NAND array structure is used, the unit cell size of MLVC-SONOS is 4F2. Further reduction of cell size is possible by using the multilevel concept which is originated from the steady states by two carrier transports from both the substrate and the gate. The program threshold voltages and their windows are uniform and controllable depending on the negative gate bias conditions. In addition, we propose a new endurance measurement method for multilevels and report the retention characteristics for multilevel memory operation.
  • Keywords
    Etching; Flash memory; Lithography; Logic; Nonvolatile memory; SONOS devices; Silicon on insulator technology; Steady-state; Stress; Virtual colonoscopy;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2002.805001
  • Filename
    1097946
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=787706