• DocumentCode
    787751
  • Title

    Correction to "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs"

  • Author

    Tung, C.H. ; Pey, K.L. ; Lin, W.H. ; Radhakrishnan, M.K.

  • Author_Institution
    Nanyang Technological University
  • Volume
    23
  • Issue
    11
  • fYear
    2002
  • Firstpage
    676
  • Lastpage
    676
  • Abstract
    In the above-named work the Fig 1 caption was incorrect. The figure is presented with a corrected caption.
  • Keywords
    Dielectrics; Epitaxial growth; Instruments; MOSFET circuits; Microelectronics; Semiconductor device manufacture; Silicon; Stress; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2002.806973
  • Filename
    1097950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=787751