• DocumentCode
    787757
  • Title

    Correction to "Trench Isolation Step-Induced (TRISI) Narrow Width Effect on MOSFET"

  • Author

    Youngmin Kim ; Sridhar, S. ; Chatterjee, Avhishek

  • Author_Institution
    Texas Instruments
  • Volume
    23
  • Issue
    11
  • fYear
    2002
  • Firstpage
    676
  • Lastpage
    676
  • Abstract
    In the above-named work, an incorrect version of Figs. 1 and 2 appeared. The corrected figures are presented.
  • Keywords
    Capacitance; Instruments; MOSFET circuits; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2002.806972
  • Filename
    1097951
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=787757