Title :
Analysis of DC current accelerated life tests of GaN LEDs using a Weibull-based statistical model
Author :
Levada, Simone ; Meneghini, Matteo ; Meneghesso, Gaudenzio ; Zanoni, Enrico
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Italy
Abstract :
Gallium-nitride-based light-emitting diode (LED) accelerated life tests were carried out over devices adopting two different packaging schemes (i.e., with plastic transparent encapsulation or with pure metallic package). Data analyses were done using a Weibull-based statistical description with the aim of estimating the effect of high current on device performance. A consistent statistical model was found with the capability to estimate the mean time to failure (MTTF) of devices during DC current stress and the accelerating factors of high current stresses.
Keywords :
III-V semiconductors; Weibull distribution; failure analysis; gallium compounds; life testing; light emitting diodes; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; statistical analysis; wide band gap semiconductors; DC current stress; GaN; Weibull-based statistical model; accelerated life test; data analysis; device mean time to failure estimation; gallium-nitride-based light-emitting diode; Acceleration; Data analysis; Encapsulation; Gallium compounds; Gallium nitride; Life estimation; Life testing; Light emitting diodes; Plastic packaging; Stress; Gallium compounds; Weibull distributions; light-emitting diodes; reliability estimation; stress;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2005.860817
