Dry etching of AlTiC with CF4 and H2 for slider fabrication

AlTiC etching in CF₄ and H₂ high-density plasma is investigated. Its etching rate is relatively high and it is not corrosive to the giant magnetoresistive elements. The effects of etching parameters such as pressure, gas flow rate, radio-frequency power, and inductively coupled plasma power on the etching rate, selectivity and surface roughness are studied. The etching parameters are optimized to balance the etching rates of Al₂O₃ and TiC in order to obtain a smooth etched surface. The etching wall profile and a fabricated 6-nm flying height femto slider are also presented.