Title :
Dry etching of AlTiC with CF4 and H2 for slider fabrication
Author :
Zhang, Mingsheng ; Hor, Yuet Sim ; Han, Guchang ; Liu, Bo
Author_Institution :
Data Storage Inst., Singapore, Singapore
Abstract :
AlTiC etching in CF4 and H2 high-density plasma is investigated. Its etching rate is relatively high and it is not corrosive to the giant magnetoresistive elements. The effects of etching parameters such as pressure, gas flow rate, radio-frequency power, and inductively coupled plasma power on the etching rate, selectivity and surface roughness are studied. The etching parameters are optimized to balance the etching rates of Al2O3 and TiC in order to obtain a smooth etched surface. The etching wall profile and a fabricated 6-nm flying height femto slider are also presented.
Keywords :
giant magnetoresistance; hard discs; plasma chemistry; reaction rate constants; sputter etching; surface chemistry; surface topography; 6 nm; Al2O3; AlTiC; CF4; H2; TiC; dry etching; etching rate; etching wall profile; femto slider; gas flow rate; giant magnetoresistive elements; high-density plasma; inductively coupled plasma power; pressure; radio-frequency power; slider fabrication; smooth etched surface; surface roughness; Coils; Dry etching; Fabrication; Giant magnetoresistance; Plasma applications; Plasma density; Radio frequency; Rough surfaces; Sputter etching; Surface roughness;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2003.816448
