Broadband amplification in CMOS technology using cascaded single-stage distributed amplifier

Author

Worapishet, A. ; Chongcheawchamnan, M. ; Srisathit, S.

Author_Institution

Microelectron. Res. Center, Mahanakorn Univ. of Technol., Bangkok, Thailand

Volume

38

Issue

14

fYear

2002

fDate

7/4/2002 12:00:00 AM

Firstpage

675

Lastpage

676

Abstract

Feasibility of the cascaded single-stage distributed amplifier (CSDA) for ultra broadband amplification in complementary metal-oxide-semiconductor (CMOS) technology is investigated. A number of unique benefits gained from the CMOS CSDA over the conventional CMOS distributed amplifier structure are highlighted along with bandwidth analysis and helpful consideration. Simulated in the standard digital 0.35 μm CMOS process with realistic parasitic models, a prototype design of a four-stage CMOS CSDA provides 21 dB power gain at 5 GHz bandwidth, better than -10 dB input/output return loss and dissipates < 132 mW

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; cascade networks; distributed amplifiers; field effect MMIC; integrated circuit modelling; losses; wideband amplifiers; 0.35 micron; 132 mW; 21 dB; 5 GHz; CMOS technology; CSDA; MMIC; bandwidth analysis; broadband amplification; cascaded single-stage distributed amplifier; input/output return loss; parasitic models; power gain;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020484

Filename

1019802