DocumentCode
788012
Title
Low-frequency noise measurements as an investigation tool of pixel flickering in cooled Hg0.7Cd0.3Te focal plane arrays
Author
Perez, Jean-Philippe ; Myara, Mikhael ; Alabedra, Robert ; Orsal, Bernard ; Leyris, Cédric ; Tourrenc, Jean-Philippe ; Signoret, Philippe
Author_Institution
Centre d Electronique et de MicroOptoElectronique de Montpellier, Montpellier Univ., France
Volume
52
Issue
5
fYear
2005
fDate
5/1/2005 12:00:00 AM
Firstpage
928
Lastpage
933
Abstract
We report on electrical noise measurements on both Hg0.7Cd0.3Te test patterns and hybrid 320 × 256 focal plane array in order to explain the low-frequency pixel flickering physical origin. Dark and under infrared illumination test patterns characterization highlights that the detector chip is not responsible for the flickering phenomenon. Taking into account the silicon readout chip influence when the full infrared complementary metal-oxyd semiconductor (IRCMOS) infrared detector is investigated, the indium bump based interconnecting system is finally pointed out as a potential excess noise source.
Keywords
CMOS image sensors; electric noise measurement; flicker noise; focal planes; infrared detectors; 1/f noise; Hg0.7Cd0.3Te; IRCMOS infrared detector; RTS; cooled focal plane arrays; detector chip; electrical noise measurements; excess noise source; illumination test patterns characterization; indium bump; infrared photodetector; interconnecting system; pixel flickering; silicon readout chip; 1f noise; Indium; Infrared detectors; Lighting; Low-frequency noise; Mercury (metals); Noise measurement; Silicon; Tellurium; Testing; Detectivity; HgCdTe; RTS; indium bump; infrared complementary metal-oxyd semiconductor (IRCMOS); infrared photodetector; pixel;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2005.846328
Filename
1424381
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