Title :
Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
Author :
Fager, Christian ; Pedro, José Carlos ; De Carvalho, Nuno Borges ; Zirath, Herbert
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Gothenburg, Sweden
fDate :
12/1/2002 12:00:00 AM
Abstract :
In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit.
Keywords :
UHF field effect transistors; UHF power amplifiers; equivalent circuits; intermodulation distortion; power MOSFET; semiconductor device models; IMD characteristics; IMD prediction; LDMOS transistor amplifiers; LDMOS transistor linearity; class-AB power amplifier circuit; empirical large-signal model; intermodulation distortion behaviour; large-signal model; turn-on region; Circuits; Distortion measurement; Frequency measurement; High power amplifiers; Intermodulation distortion; Linearity; Performance analysis; Performance evaluation; Power measurement; Predictive models;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2002.805187
