• DocumentCode
    788108
  • Title

    Secondary-Electron Emission

  • Author

    Simon, R.E. ; Williams, B.F.

  • Author_Institution
    RCA Electronic Components David Sarnoff Research Center Princeton, New Jersey 08540
  • Volume
    15
  • Issue
    3
  • fYear
    1968
  • fDate
    6/1/1968 12:00:00 AM
  • Firstpage
    167
  • Lastpage
    170
  • Abstract
    The secondary-emission process, which is fundamental to photomultipliers used in scintillation counters, can be considered to consist of three physical processes: (1) excitation of secondary electrons, (2) transport of these electrons through the solid, and (3) transport through the vacuum-solid interface. Based upon these processes, a model can be derived which explains the shape and magnitude of the secondary-emission yield curves as well as the velocity distribution of the emitted electrons. Furthermore, such a model can be useful in the search for better secondary emitters. The application of certain solid-state concepts such as band bending to the preparation and processing of appropriate semiconductors has led to enormous improvement in the transport and escape of secondary electrons and has made possible the development of a new type of secondary emitter with a maximum yield which is an order of magnitude or more greater than the yields of the best previously described materials. These secondary-electron emitters may be useful in producing multipliers with fewer stages, better statistics, and higher speeds than those presently available.
  • Keywords
    Electron beams; Electron emission; Electronic components; Elementary particle vacuum; Photomultipliers; Semiconductor materials; Shape; Solid scintillation detectors; Solid state circuits; Statistics;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1968.4324934
  • Filename
    4324934