A non-quasi-static MOSFET model for SPICE-AC analysis

Author

Park, Hong June ; Ho, P.K. ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

11

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1247

Lastpage

1257

Abstract

Based on an approximate solution to the nonlinear current continuity equation in the channel, an analytic non-quasi-static model for long-channel MOSFETs has been derived and implemented in SPICE. The model includes the large-signal transient and the small-signal AC analyses, although only the AC model is reported. Excellent agreement in simulation results has been achieved between this work and CODECS (a mixed device and circuit simulator). The CPU time required for this work is about twice as long as that for currently available quasi-static MOSFET models in SPICE

Keywords

SPICE; insulated gate field effect transistors; semiconductor device models; AC analysis; CODECS; MOSFET model; SPICE; large-signal transient analysis; long-channel MOSFETs; mixed device/circuit simulator; nonlinear current continuity equation; nonquasistatic model; small-signal AC analyses; Capacitance; Circuit simulation; FETs; Frequency; MOSFET circuits; Nonlinear equations; SPICE; Threshold voltage; Transconductance; Transient analysis;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.170988

Filename

170988