Exchange anisotropy in reactively sputtered amorphous CoFeSiB:O thin films

Author

Choe, G. ; Banerjee, R. ; Win, W. ; Walser, R.M.

Author_Institution

Center for Magnetics, Texas Univ., Austin, TX, USA

Volume

31

Issue

6

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

3862

Lastpage

3864

Abstract

Exchange-shifted hysteresis loops were observed at 300 K in thin amorphous films deposited from a CoFeSiB alloy target by reactive oxygen sputtering. The heterogeneous film morphologies consisted of nanoscale features with thin, apparently oxidized, boundaries, The exchange shift varied with the film thickness, and with the ratio of the oxygen to argon gas flow, The CoFeSiB:O films exhibiting exchange anisotropy had resistivities in the range ~10³ μΩ·cm to ~10 ⁴ μΩ·cm. The maximum shift (~10 Oe) was observed in films with a resistivity of ~2500 μΩ·cm. The exchange anisotropy appears to be due to coupling between nanoscale regions with different coercivities

Keywords

amorphous magnetic materials; boron alloys; cobalt alloys; coercive force; electrical resistivity; exchange interactions (electron); ferromagnetic materials; iron alloys; magnetic anisotropy; magnetic hysteresis; oxygen; silicon alloys; sputtered coatings; 300 K; CoFeSiB:O; a-CoFeSiB:O; coercivity; exchange anisotropy; film thickness; heterogeneous film morphology; hysteresis loops; reactively sputtered thin films; resistivity; Amorphous magnetic materials; Amorphous materials; Anisotropic magnetoresistance; Argon; Coercive force; Conductivity; Magnetic films; Magnetic hysteresis; Morphology; Sputtering;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.489797

Filename

489797