Title :
High temperature performance of self-organised quantum dot laser with stacked p-doped active region
Author :
Shchekin, O.B. ; Ahn, J. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
7/4/2002 12:00:00 AM
Abstract :
A stacked p-doped quantum dot active region is used to obtain a high characteristic temperature in GaAs-based 1.3 μm lasers. A characteristic temperature of 232 K (213 K) is obtained between 0 and 81°C for pulsed (continuous-wave) operation for lasers with 0.97 mm cavity length and five stacks of quantum dot layers. The room-temperature continuous-wave output power for a 0.65 mm cavity length reaches 27 mW with a 5.7 mA threshold
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; quantum well lasers; semiconductor quantum dots; 0 to 81 degC; 0.65 mm; 1.3 micron; 213 K; 232 K; 27 mW; GaAs-AlGaAs; GaAs/AlGaAs; cavity length; characteristic temperature; continuous-wave operation; output power; pulsed operation; self-organised quantum dot laser; stacked p-doped active region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020509
