A new driving circuit for IGBT devices

Author

Licitra, Carmelo ; Musumeci, Salvatore ; Raciti, Angelo ; Galluzzo, Agostino U. ; Letor, Romeo ; Melito, Maurizio

Author_Institution

Dipartimento Elettrico Elettronico & Sistemistico, Catania Univ., Italy

Volume

10

Issue

3

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

373

Lastpage

378

Abstract

IGBT devices are increasingly used in power electronic equipment due to their high power handling capability. This paper deals with the problems that concern the turn-on, turn-off, and short-circuit of these devices. An optimal new driving circuit is proposed which gives excellent device output performances. Experimental oscillogram traces of transient condition tests are given, which demonstrate the advantages of using the new driving circuit. The suitability of the driving circuit for integration is analyzed

Keywords

circuit testing; driver circuits; insulated gate bipolar transistors; short-circuit currents; switching circuits; transient analysis; IGBT devices; driving circuit; high power handling capability; integration; oscillogram traces; power electronic equipment; short-circuit; switching; transient condition tests; turn-off; turn-on; Circuit testing; Equivalent circuits; Frequency; Insulated gate bipolar transistors; MOSFET circuits; Parasitic capacitance; Protection; Switches; Switching circuits; Voltage control;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.388004

Filename

388004