The lumped-charge power MOSFET model, including parameter extraction

Author

Budihardjo, Irwan ; Lauritzen, Peter O.

Author_Institution

Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA

Volume

10

Issue

3

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

379

Lastpage

387

Abstract

A fundamentally new, physically-based power MOSFET model features continuous and accurate curves for all three interelectrode capacitances. The model equations are derived from the charge stored on two internal nodes and the three external terminals. A straightforward parameter extraction technique uses the standard gate-charge plot or process data and is matched with interelectrode capacitance measurements. Simulations are in excellent agreement with measurements. The model is used to design a snubber for a flyback converter

Keywords

capacitance measurement; circuit analysis computing; digital simulation; power MOSFET; power convertors; protection; semiconductor device models; snubbers; SPICE; external terminals; flyback converter; interelectrode capacitances; internal nodes; lumped-charge power MOSFET model; model equations; parameter extraction; parameter extraction technique; process data; snubber; standard gate-charge plot; stored charge; Capacitance measurement; Equations; FETs; MOSFET circuits; Measurement standards; Parameter extraction; Power MOSFET; Senior members; Snubbers; Voltage;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.388005

Filename

388005