Improved GaN-Based LED Light Extraction Efficiencies via Selective MOCVD Using Peripheral Microhole Arrays

GaN-based light-emitting diodes with peripheral microhole arrays (PMA-LEDs) have been grown, and fabricated, on SiO₂ hexagonal pattern masks using selective metal-organic chemical vapor deposition. The PMA-LED structure promises to enhance the light extraction efficiency via simple fabrication processes, as compared to conventional LED structures. The geometrical shape of the peripheral microhole structure serves to enhance the light extraction efficiency due to the effect of the PMA in facilitating multiple chances for photons to escape. Thus, the light output intensity of PMA-LED was 30% higher than that of conventional LEDs.