Title :
Polarization-Insensitive GaInNAs–GaInAs MQW-SOA With Low Noise Figure and Small Gain Tilt Over 90-nm Bandwidth (1510–1600 nm)
Author :
Tanaka, Shinsuke ; Uetake, Ayahito ; Yamazaki, Susumu ; Ekawa, Mitsuru ; Morito, Ken
Author_Institution :
Fujitsu Ltd., Atsugi
Abstract :
rdquoWe developed a broadband polarization-insensitive multiquantum-well (MQW) semiconductor optical amplifier (SOA) for application as an optical switch in broadcast-and-select-type optical packet switching systems. We adopted a GalnNAs-GalnAs MQW structure active layer to decrease the noise figure (NF) around the gain peak wavelength together with a small gain tilt in the C-band. The device exhibited a smaller NF on the shorter wavelength side of the gain peak compared with a GalnNAs strained-bulk SOA. The reduced NF resulted in a large effective gain bandwidth of up to 90 nm (1510-1600 nm). The device also exhibited the small gain tilt (<1.2 dB) and small polarization-dependent gain (<0.8 dB) in the C-band.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical communication equipment; optical switches; packet switching; quantum well lasers; semiconductor optical amplifiers; GaInNAs-GaInAs; broadcast-and-select-type optical packet switching systems; gain tilt; noise figure; optical switch; polarization-dependent gain; polarization-insensitive multiquantum-well semiconductor optical amplifier; Bandwidth; Broadcasting; Gain; Noise figure; Noise measurement; Optical packet switching; Optical polarization; Optical switches; Quantum well devices; Semiconductor optical amplifiers; GaInNAs; optical switch; quantum-well device; semiconductor optical amplifier (SOA);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.926916