Title :
1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)
Author :
Kasukawa, A. ; Imajo, Yoshihiro ; Makino, Tatsuya
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
Reports the first successful demonstration of a 1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well laser (BH-GRIN-SC-MQW LD) entirely grown by three-step low pressure metal-organic chemical vapour deposition (LP-MOCVD). The threshold current and the differential quantum efficiency were 31 mA (threshold current density 3.4 kA/cm2) and 28%/facet, respectively. A characteristic temperature of 65 K was obtained.
Keywords :
CVD coatings; III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 1.3 micron; 31 mA; 65 K; GaInAsP-InP; buried heterostructure graded index separate confinement multiple quantum well; characteristic temperature; differential quantum efficiency; metalorganic chemical vapour deposition; three-step low pressure; threshold current; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890077
