• DocumentCode
    788896
  • Title

    In-plane velocity-field characteristics of InAs self-assembled quantum dot layers

  • Author

    Kochman, B. ; Ghosh, S. ; Singh, J. ; Bhattacharya, P.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    38
  • Issue
    14
  • fYear
    2002
  • fDate
    7/4/2002 12:00:00 AM
  • Firstpage
    752
  • Lastpage
    753
  • Abstract
    The in-plane velocity-field characteristics of InAs self-assembled quantum dots are measured experimentally and modelled theoretically with Monte Carlo simulation. An unusual result is observed in that the mobility increases at higher electric fields. This is because the more energetic electrons are less likely to be trapped by the quantum dots, resulting in a higher electron mobility
  • Keywords
    III-V semiconductors; Monte Carlo methods; electron mobility; indium compounds; self-assembly; semiconductor quantum dots; InAs; InAs self-assembled quantum dot; Monte Carlo simulation; electron mobility; in-plane velocity-field characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020504
  • Filename
    1019892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=788896