DocumentCode :
788920
Title :
Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors
Author :
Selvanathan, D. ; Zhou, L. ; Kumar, V. ; Long, J.P. ; Johnson, MAL ; Schetzina, J.F. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume :
38
Issue :
14
fYear :
2002
fDate :
7/4/2002 12:00:00 AM
Firstpage :
755
Lastpage :
756
Abstract :
Low-resistance ohmic contacts on Al0.59Ga0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10-5 Ω-cm2 was achieved using a pre-metallisation treatment of the surface in an SiCl4 plasma with a self-bias voltage of -300 V in a reactive ion etching system
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; ohmic contacts; photodetectors; semiconductor device metallisation; sputter etching; wide band gap semiconductors; -300 V; Al0.59Ga0.41N; SiCl4; SiCl4 plasma surface treatment; Ti-Al-Mo-Au; Ti/Al/Mo/Au metallisation; n-type Al0.59Ga0.41N; ohmic contact; reactive ion etching; solar blind detector; specific contact resistivity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020500
Filename :
1019894
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=788920
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