• DocumentCode
    788920
  • Title

    Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors

  • Author

    Selvanathan, D. ; Zhou, L. ; Kumar, V. ; Long, J.P. ; Johnson, MAL ; Schetzina, J.F. ; Adesida, I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • Volume
    38
  • Issue
    14
  • fYear
    2002
  • fDate
    7/4/2002 12:00:00 AM
  • Firstpage
    755
  • Lastpage
    756
  • Abstract
    Low-resistance ohmic contacts on Al0.59Ga0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10-5 Ω-cm2 was achieved using a pre-metallisation treatment of the surface in an SiCl4 plasma with a self-bias voltage of -300 V in a reactive ion etching system
  • Keywords
    III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; ohmic contacts; photodetectors; semiconductor device metallisation; sputter etching; wide band gap semiconductors; -300 V; Al0.59Ga0.41N; SiCl4; SiCl4 plasma surface treatment; Ti-Al-Mo-Au; Ti/Al/Mo/Au metallisation; n-type Al0.59Ga0.41N; ohmic contact; reactive ion etching; solar blind detector; specific contact resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020500
  • Filename
    1019894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=788920