DocumentCode
788977
Title
Ballistic magnetoresistance versus magnetostriction effects in electrodeposited nanocontacts at room temperature
Author
Garcia, N. ; Wang, Hai ; Cheng, Hao ; Nikolic, N.D.
Author_Institution
Laboratorio de Fisica de Sistemas Pequenos y Nanotechnologia, CSIC, Madrid, Spain
Volume
39
Issue
5
fYear
2003
Firstpage
2776
Lastpage
2781
Abstract
The authors present experiments and discuss recent results on ballistic magnetoresistance in nanometer size (on the order of 1 to 10 nm) nanocontacts grown by electrodeposition in thin wires and in thin films of a few nanometer thickness. Very large values of magnetoresistance are shown (up to 4000% and more could be obtained). These experiments as well as others are explained in terms of a dead magnetic layer appearing at the nanocontact. The experiments are also discussed in the context of magnetostriction effects, in the light of existing first principle calculations and observed inverse magnetoresistive effects.
Keywords
ballistic transport; electrodeposits; ferromagnetic materials; magnetoresistance; magnetostriction; nanocontacts; nickel; 1 to 10 nm; 300 K; Ni; ballistic magnetoresistance; electrodeposited nanocontacts; electrodeposition; magnetostriction; Ballistic magnetoresistance; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic materials; Magnetostriction; Nanocontacts; Perpendicular magnetic anisotropy; Temperature; Wires;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2003.815708
Filename
1233213
Link To Document