• DocumentCode
    788977
  • Title

    Ballistic magnetoresistance versus magnetostriction effects in electrodeposited nanocontacts at room temperature

  • Author

    Garcia, N. ; Wang, Hai ; Cheng, Hao ; Nikolic, N.D.

  • Author_Institution
    Laboratorio de Fisica de Sistemas Pequenos y Nanotechnologia, CSIC, Madrid, Spain
  • Volume
    39
  • Issue
    5
  • fYear
    2003
  • Firstpage
    2776
  • Lastpage
    2781
  • Abstract
    The authors present experiments and discuss recent results on ballistic magnetoresistance in nanometer size (on the order of 1 to 10 nm) nanocontacts grown by electrodeposition in thin wires and in thin films of a few nanometer thickness. Very large values of magnetoresistance are shown (up to 4000% and more could be obtained). These experiments as well as others are explained in terms of a dead magnetic layer appearing at the nanocontact. The experiments are also discussed in the context of magnetostriction effects, in the light of existing first principle calculations and observed inverse magnetoresistive effects.
  • Keywords
    ballistic transport; electrodeposits; ferromagnetic materials; magnetoresistance; magnetostriction; nanocontacts; nickel; 1 to 10 nm; 300 K; Ni; ballistic magnetoresistance; electrodeposited nanocontacts; electrodeposition; magnetostriction; Ballistic magnetoresistance; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic materials; Magnetostriction; Nanocontacts; Perpendicular magnetic anisotropy; Temperature; Wires;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2003.815708
  • Filename
    1233213