• DocumentCode
    789003
  • Title

    Control of magnetic anisotropy and magnetotransport in epitaxial micropatterned (Ga,Mn)As wire structures

  • Author

    Hamaya, K. ; Moriya, R. ; Oiwa, A. ; Taniyama, T. ; Kitamoto, Y. ; Munekata, H.

  • Author_Institution
    Dept. of Innovative & Engineered Mater., Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    39
  • Issue
    5
  • fYear
    2003
  • Firstpage
    2785
  • Lastpage
    2787
  • Abstract
    The authors present magnetoresistance characteristics of patterned (Ga,Mn)As wire structures, which depend on wire width and thus overall magnetic anisotropy. Cubic and uniaxial magnetocrystalline anisotropies seem to be the dominant magnetic contributions in 2-μm-wide wires, whereas both magnetocrystalline and shape-induced anisotropies contribute to magnetization reversal in 1-μm-wide wires, as manifested by jumps in the magnetoresistance curves. The role of these two anisotropies in the magnetization reversal is discussed, together with the determination of magnetic easy/hard axes of (Ga,Mn)As wires.
  • Keywords
    III-V semiconductors; gallium arsenide; interface magnetism; magnetic anisotropy; magnetisation; magnetisation reversal; magnetoresistance; manganese compounds; nanowires; semimagnetic semiconductors; 1 micron; 2 micron; GaMnAs; epitaxial micropatterned (Ga,Mn)As wire; magnetic anisotropy; magnetic axes; magnetization reversal; magnetoresistance; magnetotransport; Anisotropic magnetoresistance; Magnetic anisotropy; Magnetic domains; Magnetic field measurement; Magnetic semiconductors; Magnetization reversal; Perpendicular magnetic anisotropy; Scanning electron microscopy; Superconducting magnets; Wire;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2003.815710
  • Filename
    1233215