DocumentCode :
789003
Title :
Control of magnetic anisotropy and magnetotransport in epitaxial micropatterned (Ga,Mn)As wire structures
Author :
Hamaya, K. ; Moriya, R. ; Oiwa, A. ; Taniyama, T. ; Kitamoto, Y. ; Munekata, H.
Author_Institution :
Dept. of Innovative & Engineered Mater., Tokyo Inst. of Technol., Yokohama, Japan
Volume :
39
Issue :
5
fYear :
2003
Firstpage :
2785
Lastpage :
2787
Abstract :
The authors present magnetoresistance characteristics of patterned (Ga,Mn)As wire structures, which depend on wire width and thus overall magnetic anisotropy. Cubic and uniaxial magnetocrystalline anisotropies seem to be the dominant magnetic contributions in 2-μm-wide wires, whereas both magnetocrystalline and shape-induced anisotropies contribute to magnetization reversal in 1-μm-wide wires, as manifested by jumps in the magnetoresistance curves. The role of these two anisotropies in the magnetization reversal is discussed, together with the determination of magnetic easy/hard axes of (Ga,Mn)As wires.
Keywords :
III-V semiconductors; gallium arsenide; interface magnetism; magnetic anisotropy; magnetisation; magnetisation reversal; magnetoresistance; manganese compounds; nanowires; semimagnetic semiconductors; 1 micron; 2 micron; GaMnAs; epitaxial micropatterned (Ga,Mn)As wire; magnetic anisotropy; magnetic axes; magnetization reversal; magnetoresistance; magnetotransport; Anisotropic magnetoresistance; Magnetic anisotropy; Magnetic domains; Magnetic field measurement; Magnetic semiconductors; Magnetization reversal; Perpendicular magnetic anisotropy; Scanning electron microscopy; Superconducting magnets; Wire;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2003.815710
Filename :
1233215
Link To Document :
بازگشت