• DocumentCode
    789081
  • Title

    Interfacial composition and microstructure of Fe3O4 magnetic tunnel junctions

  • Author

    Park, Chando ; Shi, Yiming ; Peng, Yingguo ; Barmak, Katayun ; Zhu, Jian-Gang ; Laughlin, David E. ; White, Robert M.

  • Author_Institution
    Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA, USA
  • Volume
    39
  • Issue
    5
  • fYear
    2003
  • Firstpage
    2806
  • Lastpage
    2808
  • Abstract
    Magnetic tunnel junctions with an Fe3O4 top electrode have been fabricated. High resolution transmission electron microscopy (HRTEM) shows that in as-deposited state, Fe and FeO phases exist at the interface. These two phases are believed to have formed as a result of the unstable plasma condition at the start of the Fe3O4 deposition. A relatively low magnetoresistance ratio (MR) (3.5%) and low switching field (HC2) (40 Oe) is observed which is associated with the fact that the FeO phase magnetically isolates the Fe phase from the Fe3O4 phase at the interface. After annealing at 150°C for 5 h, the MR as well as the switching field (HC2) increases by a factor of two. HRTEM shows that the FeO phase at the interface has transformed into Fe and Fe3O4 in the annealed sample, resulting in the increased MR (7.0%) and higher switching field (HC2) (300 Oe). However, annealing does not completely remove Fe at the interface, thereby limiting the MR.
  • Keywords
    annealing; interface magnetism; interface structure; iron compounds; magnetic switching; magnetic tunnelling; magnetoresistance; transmission electron microscopy; 150 degC; 5 h; Fe3O4; Fe3O4 magnetic tunnel junctions; HRTEM; annealing; interface phase structure; interfacial composition; magnetoresistance ratio; microstructure; switching field; Annealing; Electrodes; Iron; Magnetic materials; Magnetic tunneling; Magnetoresistance; Microstructure; Plasma temperature; Sputtering; Transmission electron microscopy;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2003.815718
  • Filename
    1233222