DocumentCode :
789092
Title :
Annealing of 10 MeV Electron Damage in Silicon
Author :
Bass, R.F. ; Curtis, O.L., Jr.
Author_Institution :
Northrop Corporate Laboratories Hawthorne, California
Volume :
15
Issue :
6
fYear :
1968
Firstpage :
47
Lastpage :
54
Abstract :
Annealing studies were performed to investigate the recovery of both the carrier concentration and lifetime in silicon following room temperature irradiation with 10-MeV electrons. Both n- and p-type material containing the more common dopants and varying amounts of oxygen were employed to evaluate the effect of these impurities on the annealing behavior. The recovery of carriers in n-type material was found to depend very strongly upon oxygen. A well-defined recovery stage was observed at intermediate temperature (~110° to 180° C) in oxygen-free samples but not in pulled material. The position of the stage appeared to depend upon the dopant, and for this reason it is attributed to the breakup of donor-vacancy complexes. In contrast, no appreciable carrier recovery was obtained in p-type material after anneals up to 253° C, regardless of the dopant or the oxygen content. Annealing of lifetime changes was particularly interesting. A pronounced annealing stage at ~225° C was observed in all but one of the n-type samples regardless of the oxygen content and in p-type samples containing oxygen. The detailed behavior due to this stage was dependent upon the radiation dose. Oxygen-free p-type samples exhibited completely different annealing behavior. A prominent reverse annealing stage at~144° C was observed in four of these samples and no subsequent positive recovery was observed up to 283° C.
Keywords :
Annealing; Conductivity; Crystals; Electrons; Impurities; Laboratories; Silicon; Temperature; Thermal degradation; Ultrasonic variables measurement;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1968.4325030
Filename :
4325030
Link To Document :
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