Title :
Magnetoresistance modulation in single-electron transistors
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The tunneling magnetoresistance (TMR) of a ferromagnetic single-electron transistor, consisting of an ultrasmall "island" electrode separated from contact electrodes by thin tunnel barriers, is modeled. The TMR of the device can be modulated externally via gate Vg or source-drain V voltages. When the tunnel resistance Rt is highly asymmetric, the TMR shows periodic spike modulation with Vg. For symmetric Rt, a linear (sawtooth) modulation occurs instead. In the presence of spin accumulation, a sharp change of TMR ratio of up to 25% is obtained at a certain critical voltage.
Keywords :
Coulomb blockade; ferromagnetism; single electron transistors; tunnelling magnetoresistance; Coulomb blockade; contact electrodes; critical voltage; ferromagnetic single-electron transistors; gate voltages; linear sawtooth modulation; magnetoresistance modulation; periodic spike modulation; source-drain voltages; thin tunnel barriers; tunnel resistance; tunneling magnetoresistance; ultrasmall island electrode; Contact resistance; Electrodes; Magnetic modulators; Magnetic switching; Material storage; Single electron transistors; Switches; Thermal resistance; Tunneling magnetoresistance; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2003.815722
