DocumentCode :
789165
Title :
Fabrication of metallic microstructures by electroplating using deep-etched silicon molds
Author :
Sander, D. ; Hoffmann, R. ; Reiling, V. ; Müller, J.
Author_Institution :
Halbleitertechnol., Tech. Univ. Hamburg-Harburg, Germany
Volume :
4
Issue :
2
fYear :
1995
fDate :
6/1/1995 12:00:00 AM
Firstpage :
81
Lastpage :
86
Abstract :
A new technology is presented here to fabricate three-dimensional micromachined metal structures. The microstructures are manufactured by electroplating in deep-etched silicon structures followed by a separation from their mold. Up to 140-μm-deep silicon structures with vertical sidewalls are realized by an anisotropic plasma etching process producing the mold for electroplating. An etching gas mixture of SF6s and CBrF3 is used to achieve both an anisotropic etching behavior by protective film formation of CF2 -radicals and high etching rates. The anisotropy is due to photoresist masking, which enhances the polymer formation. The vertical trenches are electroplated from the trench base filling the structures uniformly to the substrate surface. By avoiding overplating across the whole substrate the resulting structures are suitable for micromechanical devices. If needed, released microstructures from the silicon mold can be obtained by direct lift-off
Keywords :
electroplating; masks; micromachining; micromechanical devices; photoresists; sputter etching; 140 micron; Si; anisotropic etching behavior; anisotropic plasma etching process; deep-etched silicon molds; direct lift-off; electroplating; etching gas mixture; etching rates; metallic microstructures; micromechanical devices; photoresist masking; polymer formation; protective film formation; three-dimensional micromachined metal structures; trench base; vertical sidewalls; Anisotropic magnetoresistance; Etching; Fabrication; Manufacturing; Microstructure; Plasma applications; Plasma materials processing; Protection; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.388116
Filename :
388116
Link To Document :
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