Title :
InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al0.3Ga0.7As blocking barriers
Author :
Tang, Shiang-Feng ; Lin, Shih-Yen ; Lee, Si-Chen
Author_Institution :
CSIST, Chung-li, Taiwan
fDate :
8/1/2002 12:00:00 AM
Abstract :
The ten stacked self-assembled InAs/GaAs quantum dot infrared photodetectors (QDIP) with different Al0.3Ga0.7As barrier widths and growth temperatures were prepared. Asymmetric current-voltage (I-V) characteristics and 2∼7.5 μm detection window were observed. Peak responsivity of 84 mA/W at -0.4 V and peak specific detectivity of 2.5×109 cm-Hz12//W at zero bias were observed at 50 K. The characteristics of polarization insensitivity over the incident light and the high background photocurrent suggest that the self-assembled QDIP can be operated at higher temperature (∼250 K) under normal incidence condition in contrast to quantum well infrared photodetector (QWIP).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; photoluminescence; semiconductor quantum dots; 2 to 7.5 micron; 50 to 250 K; InAs/GaAs quantum dot IR photodetectors; MBE; asymmetric I-V characteristics; current-voltage characteristics; double AlGaAs blocking barriers; growth temperatures; high background photocurrent; infrared photodetectors; molecular beam epitaxy; photoluminescence spectra; polarization insensitivity; self-assembled QDIP; self-assembled quantum dot photodetectors; Biological materials; Costs; Dark current; Gallium arsenide; Indium; Optical polarization; Photodetectors; Quantum dots; Temperature; US Department of Transportation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.801441
