Title :
Rashba effects in an FM/I/2DEG/I/FM structure
Author :
Jiang, Y. ; Jalil, M.B.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
In this paper, we model the effect of Rashba spin-orbit interaction, induced by structural inversion asymmetry, on the ballistic charge transport across a hybrid ferromagnetic two-dimensional electron gas (FM-2DEG) device, with a double tunnel junction. We show that the spin polarization of current and magnetoconductance (MC) of the device can be strongly modulated by the Rashba effect.
Keywords :
ballistic transport; magnetic multilayers; magnetoelectronics; magnetoresistance; spin polarised transport; spin-orbit interactions; two-dimensional electron gas; Rashba effect modulation; Rashba spin-orbit interaction; ballistic charge transport; current spin polarization; double tunnel junction; hybrid ferromagnetic two-dimensional electron gas device; magnetoconductance; structural inversion asymmetry; Electrodes; Electrons; Insulation; Magnetic devices; Magnetic materials; Magnetic semiconductors; Magnetoelectronics; Material storage; Polarization; Spin polarized transport;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2003.815728
