InGaN/GaN light emitting diodes with a p-down structure

Author

Su, Y.K. ; Chang, S.J. ; Ko, Chih-Hsin ; Chen, J.F. ; Kuan, Ta-Ming ; Lan, Wen How ; Lin, Wen-Jen ; Cherng, Ya-Tung ; Webb, Jim

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

49

Issue

8

fYear

2002

fDate

8/1/2002 12:00:00 AM

Firstpage

1361

Lastpage

1366

Abstract

Nitride-based p-down blue light emitting diodes (LEDs) were successfully fabricated. It was found that we could improve the crystal quality of these nitride-based p-down LEDs by inserting a codoped interlayer between the p-type cladding layer and MQW active layers. It was also found that the turn-on voltage could be reduced from 15 V to less than 5 V for the p-down LED with codoped layer and tunnel layer. The 20 mA output power was 1 mW for the p-down LED with an Mg+Si codoped interlayer and a rough p-tunnel layer.

Keywords

III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; photoluminescence; quantum well devices; semiconductor doping; wide band gap semiconductors; 1 mW; 20 mA; 5 V; InGaN-GaN-GaN:Mg,Si; InGaN/GaN blue LEDs; MQW active layers; Mg+Si codoped interlayer; PL spectra; blue light emitting diodes; co-doped interlayer; electroluminescence characteristics; nitride-based p-down LEDs; p-down structure; p-type cladding layer; tunnel layer; turn-on voltage reduced; Councils; Doping; Electroluminescence; Gallium nitride; Indium tin oxide; Light emitting diodes; Power generation; Quantum well devices; Voltage; X-ray diffraction;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.801277

Filename

1019921