Title :
A process integration of high-performance 64-kb MRAM
Author :
Kim, Kinam ; Jeong, W.C. ; Koh, K.H. ; Jeong, G.T. ; Park, J.H. ; Lee, S.Y. ; Oh, J.H. ; Song, I.H. ; Jeong, H.S. ; Kinam Kim
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea
Abstract :
We have demonstrated fully integrated 64-kb magnetoresistive random access memory (MRAM) using 0.24-μm CMOS technology and discussed some key issues in process integration. Optimal tunneling magnetoresistive (TMR) properties of MRAM bits (37% of TMR ratio and 5-10 kΩ·μm2 of RA) were obtained mainly by the control of bottom electrode roughness, and electrical shorting was avoided by some commercialized wet solutions. In viewpoint of process integration, excellent TMR properties of magnetic tunnel junction (MTJ) fresh films and prevention of their degradation in post patterning process are two crucial factors, and especially, electrical shorting requires some careful control.
Keywords :
CMOS integrated circuits; giant magnetoresistance; magnetic storage; magnetoresistive devices; random-access storage; 0.24 micron; 0.24-μm CMOS technology; 64 kbit; bottom electrode roughness; commercialized wet solutions; electrical shorting; high-performance 64-kb MRAM; magnetoresistive random access memory; post patterning process; process integration; tunneling magnetoresistive properties; CMOS process; CMOS technology; Commercialization; Electrodes; Magnetic films; Magnetic properties; Magnetic tunneling; Optimal control; Random access memory; Tunneling magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2003.816243
