DocumentCode
789271
Title
Improved string ribbon silicon solar cell performance by rapid thermal firing of screen-printed contacts
Author
Yelundur, Vijay ; Rohatgi, Ajeet ; Jeong, Ji-Weon ; Hanoka, Jack I.
Author_Institution
Univ. Center of Excellence for Photovoltaics Res. & Educ., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
49
Issue
8
fYear
2002
fDate
8/1/2002 12:00:00 AM
Firstpage
1405
Lastpage
1410
Abstract
Al-enhanced SiNx-induced hydrogenation is implemented to improve the minority carrier lifetime in string ribbon Si. Rapid cooling after the hydrogenation anneal is found to increase the spatially averaged relative lifetime enhancement by over 160% for string ribbon Si samples with a spatially averaged as-grown lifetime of 2.9 μs. Partial coverage of back surface by Al eliminates wafer bowing in 100 μm thick substrates, but reduces the spatially averaged lifetime enhancement to below 100% because vacancy generation at the back surface is decreased. Rapid thermal Firing (RTF) of screen-printed contacts, with high heating and cooling rates, is found to improve string ribbon solar cell efficiency by an average of 1.2% absolute over lamp heated belt furnace contact firing. Light beam-induced current (LBIC) mapping and light biased or differential internal quantum efficiency (IQE) analysis show that the enhancement in cell performance is primarily due to an improved effective diffusion length and diffusion length uniformity, which are both a result of the improved retention of hydrogen at defects achieved during rapid cooling after contact firing. Screen-printed string ribbon cells with independently confirmed efficiencies as high as 14.7% are achieved through an understanding and implementation of hydrogen passivation of defects.
Keywords
carrier lifetime; electrical contacts; elemental semiconductors; hydrogenation; minority carriers; passivation; rapid thermal processing; semiconductor technology; silicon; solar cells; 14.7 percent; 2.9 mus; Al-enhanced SiNx-induced hydrogenation; H passivation; LBIC mapping; RTP; SiN ARC; SiN-Si-Al; antireflective coating; differential internal quantum efficiency analysis; diffusion length uniformity; effective diffusion length; hydrogenation anneal; lifetime enhancement; light beam-induced current mapping; minority carrier lifetime; partial Al back surface coverage; rapid cooling; rapid thermal firing; screen-printed contacts; solar cell efficiency improvement; string ribbon Si solar cell; surface passivation dielectric; vacancy generation; wafer bowing elimination; Charge carrier lifetime; Cooling; Firing; Hydrogen; Lamps; Photovoltaic cells; Rapid thermal annealing; Silicon compounds; Solar heating; Solar power generation;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2002.801248
Filename
1019927
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