• DocumentCode
    789271
  • Title

    Improved string ribbon silicon solar cell performance by rapid thermal firing of screen-printed contacts

  • Author

    Yelundur, Vijay ; Rohatgi, Ajeet ; Jeong, Ji-Weon ; Hanoka, Jack I.

  • Author_Institution
    Univ. Center of Excellence for Photovoltaics Res. & Educ., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    49
  • Issue
    8
  • fYear
    2002
  • fDate
    8/1/2002 12:00:00 AM
  • Firstpage
    1405
  • Lastpage
    1410
  • Abstract
    Al-enhanced SiNx-induced hydrogenation is implemented to improve the minority carrier lifetime in string ribbon Si. Rapid cooling after the hydrogenation anneal is found to increase the spatially averaged relative lifetime enhancement by over 160% for string ribbon Si samples with a spatially averaged as-grown lifetime of 2.9 μs. Partial coverage of back surface by Al eliminates wafer bowing in 100 μm thick substrates, but reduces the spatially averaged lifetime enhancement to below 100% because vacancy generation at the back surface is decreased. Rapid thermal Firing (RTF) of screen-printed contacts, with high heating and cooling rates, is found to improve string ribbon solar cell efficiency by an average of 1.2% absolute over lamp heated belt furnace contact firing. Light beam-induced current (LBIC) mapping and light biased or differential internal quantum efficiency (IQE) analysis show that the enhancement in cell performance is primarily due to an improved effective diffusion length and diffusion length uniformity, which are both a result of the improved retention of hydrogen at defects achieved during rapid cooling after contact firing. Screen-printed string ribbon cells with independently confirmed efficiencies as high as 14.7% are achieved through an understanding and implementation of hydrogen passivation of defects.
  • Keywords
    carrier lifetime; electrical contacts; elemental semiconductors; hydrogenation; minority carriers; passivation; rapid thermal processing; semiconductor technology; silicon; solar cells; 14.7 percent; 2.9 mus; Al-enhanced SiNx-induced hydrogenation; H passivation; LBIC mapping; RTP; SiN ARC; SiN-Si-Al; antireflective coating; differential internal quantum efficiency analysis; diffusion length uniformity; effective diffusion length; hydrogenation anneal; lifetime enhancement; light beam-induced current mapping; minority carrier lifetime; partial Al back surface coverage; rapid cooling; rapid thermal firing; screen-printed contacts; solar cell efficiency improvement; string ribbon Si solar cell; surface passivation dielectric; vacancy generation; wafer bowing elimination; Charge carrier lifetime; Cooling; Firing; Hydrogen; Lamps; Photovoltaic cells; Rapid thermal annealing; Silicon compounds; Solar heating; Solar power generation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.801248
  • Filename
    1019927