• DocumentCode
    789290
  • Title

    Narrow lobe emission of high power broad stripe laser in external resonator cavity

  • Author

    Goldberg, L. ; Weller, J.F.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    112
  • Lastpage
    114
  • Abstract
    Near-diffraction limited single lobe emission of an AlGaAs broad stripe laser diode is achieved up to 2.8 times threshold bias (650 mW free running output power) by placing the laser in an external resonator cavity with an angle selective reflection.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; 650 mW; AlGaAs; angle selective reflection; external resonator cavity; free running output power; high power broad stripe laser; single lobe emission; threshold bias;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890083
  • Filename
    14253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=789290