Title :
Narrow lobe emission of high power broad stripe laser in external resonator cavity
Author :
Goldberg, L. ; Weller, J.F.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
Near-diffraction limited single lobe emission of an AlGaAs broad stripe laser diode is achieved up to 2.8 times threshold bias (650 mW free running output power) by placing the laser in an external resonator cavity with an angle selective reflection.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; 650 mW; AlGaAs; angle selective reflection; external resonator cavity; free running output power; high power broad stripe laser; single lobe emission; threshold bias;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890083
