Title :
Channel noise modeling of deep submicron MOSFETs
Author :
Chen, Chih-Hung ; Deen, M. Jamal
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
fDate :
8/1/2002 12:00:00 AM
Abstract :
This brief presents a new channel noise model using the channel length modulation (CLM) effect to calculate the channel noise of deep submicron MOSFETs. Based on the new channel noise model, the simulated noise spectral densities of the devices fabricated in a 0.18 μm CMOS process as a function of channel length and bias condition are compared to the channel noise directly extracted from RF noise measurements. In addition, the hot electron effect and the noise contributed from the velocity saturation region are discussed.
Keywords :
MOSFET; hot carriers; semiconductor device models; semiconductor device noise; thermal noise; bias condition; channel length; channel length modulation effect; channel noise model; deep submicron MOSFET; gradual channel region; high-frequency noise modeling; hot electron effect; inversion charge model; noise spectral densities; thermal noise; velocity saturation region; CMOS process; Circuit noise; Integrated circuit noise; MOSFETs; Noise generators; Noise measurement; Predictive models; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.801229
